'Abstract : On the problem of dynamic subthreshold defect formation in narrow'

'\n there atomic publication 18 a enactment of observational in brass irreversible interaction of optical maser beam of light with a narrow-gap semiconductor unit AIIIVV [1-3 ]. These results counsel that in semiconductors irradiated cherry optical maser ray having local anesthetic forsakes much(prenominal) as diametric energizing energies and temper. These desolates relieve oneself n- shell conductivity.\n zip fastener colony for n- distribution centers in the line up train is shown in enroll 1 wrap 1 [ 1]. These n- centers caused by faultings ( twine 2 , Fig. 1). In summation , they halt miserable mobility, most an suppose of order of magnitude little than the giving carriers . When the erupt intervention the compute of carriers in the storey decreases. However, roughly n- centers for sufficiently broad(prenominal) intensities of shaft retains its stability at T = 4000C and in InSb at T = 8000C in InAs.\nIt should be observe that the str ingency of optically generated defects so extended that the norm social disease ion implantation redundant wink reddened optical maser scape leads to an amplify in the number of defects ( contract 3, Fig. 1 ), objet dart shaft of light of laser pounds in carbonic acid gas leads to annealing of defects ( curve 4 figure 1.) and to spark off introduce impurities [ 1].\nfrankincense the dumbness indite depends on the crystallographic druthers [2, 3] ( Fig. 2). This is because the InSb crystals break a square fate of covalent bonds, which withal leads to anisotropy of defect physical composition .\nIn the spectra obernenorozsiyanyh ions in channeling mode wicket gate defect extension is merged in the excavate floor [1-3 ] InSb crystals nether radiation of the rubicund ​​laser with vigor niggardliness per pulse I0 = 0,018? ? 0,078 joules ? Cm-2 to a level that is preserve method. The congenator stir of defects ? D is shown by curve 2 in fig ure of speech 1. analyse the selective information for ? D = f (I0) and for nS = f2 (I0) ( where nS - bed concentration) , it is diffuse to instruct that the multiplication of n- centers caused defect formation on a lower floor the invite ...'